MOSFET Transistors
Field-effect transistors controlled through an insulated gate, becoming the dominant switching device for dense digital integrated circuits.
Core metadata
- ID: mosfet_transistors
- Era: Modern
- First known date: 1960 (exact)
- Region: United States / Bell Telephone Laboratories
- Review status: source_checked
- Maturity: established
Prerequisites
- Semiconductor Devices (semiconductor_devices)
- Silicon Planar Process (silicon_planar_process)
- Transistors (transistors)
Dependents
Fields
Field lanes
- Semiconductors & Integrated Circuits: Materials & Devices
Node sources
- 1960: Metal Oxide Semiconductor (MOS) Transistor Demonstrated (Computer History Museum, 1960, museum) • Supports: node, maturity
Prerequisite edge evidence
Edge/source evidence summary:
- Prerequisite edges: 3
- Average edge confidence: 81%
- Prerequisite sources: 3
- expert_inference: 2
- textbook: 1
| Prerequisite | Type | Confidence | Evidence level | Note | Sources |
|---|---|---|---|---|---|
| Transistors (transistors) | required | 82% | expert_inference | Transistors is modeled as a necessary component or method for this technology in the current graph. |
|
| Semiconductor Devices (semiconductor_devices) | required | 82% | expert_inference | Semiconductors is modeled as a necessary component or method for this technology in the current graph. |
|
| Silicon Planar Process (silicon_planar_process) | enabling | 78% | textbook | The MOS transistor demonstration followed the silicon planar process and used oxide-passivated silicon device fabrication context. |
|
This page is generated from canonical era JSON and is indexable by URL.