FinFET Transistors
Three-dimensional field-effect transistors with fin-shaped channels that improve electrostatic control at small process nodes.
Core metadata
- ID: finfet_transistors
- Era: Modern
- First known date: 1998 (decade)
- Region: UC Berkeley and Hitachi collaboration; global semiconductor industry
- Review status: source_checked
- Maturity: established
Prerequisites
- MOSFET Transistors (mosfet_transistors)
- Nanotechnology (Early Research) (nanotechnology_early)
- Semiconductor Process Nodes (semiconductor_process_nodes)
Dependents
Fields
Field lanes
- Semiconductors & Integrated Circuits: Materials & Devices
Node sources
- Critical Feature Size of Device Manufacturing for Dominating MOSFET Evolutions (IEEE EDTM, 2020, review) • Supports: node, maturity
- Accelerating AI and HPC with Advanced Technologies (Intel Foundry, 2026, official_agency) • Supports: node, maturity
Prerequisite edge evidence
Edge/source evidence summary:
- Prerequisite edges: 3
- Average edge confidence: 80%
- Prerequisite sources: 3
- expert_inference: 3
| Prerequisite | Type | Confidence | Evidence level | Note | Sources |
|---|---|---|---|---|---|
| MOSFET Transistors (mosfet_transistors) | required | 82% | expert_inference | MOSFET Transistors is modeled as a necessary component or method for this technology in the current graph. |
|
| Semiconductor Process Nodes (semiconductor_process_nodes) | required | 82% | expert_inference | Semiconductor Process Nodes is modeled as a necessary component or method for this technology in the current graph. |
|
| Nanotechnology (Early Research) (nanotechnology_early) | historical_predecessor | 75% | expert_inference | Nanotechnology (Early Research) is an earlier historical predecessor or foundation, not a one-to-one engineering dependency. |
|
This page is generated from canonical era JSON and is indexable by URL.