DRAM Memory
Dynamic random-access memory storing bits as charge in capacitor cells refreshed by control circuitry.
Core metadata
- ID: dram_memory
- Era: Modern
- First known date: 1968 (exact)
- Region: United States / IBM
- Review status: source_checked
- Maturity: established
Prerequisites
- Integrated Circuits (Microchips) (integrated_circuits)
- MOSFET Transistors (mosfet_transistors)
- Semiconductor Devices (semiconductor_devices)
Dependents
Fields
Field lanes
- Semiconductors & Integrated Circuits: Memory & Storage
Node sources
- Dynamic Random-Access Memory (DRAM) (IBM, 1968, review) • Supports: node, maturity
Prerequisite edge evidence
Edge/source evidence summary:
- Prerequisite edges: 3
- Average edge confidence: 85%
- Prerequisite sources: 3
- primary_source: 3
| Prerequisite | Type | Confidence | Evidence level | Note | Sources |
|---|---|---|---|---|---|
| Integrated Circuits (Microchips) (integrated_circuits) | required | 86% | primary_source | IBM describes DRAM as an integrated memory-chip technology, making integrated-circuit fabrication a hard requirement for this scoped node. |
|
| MOSFET Transistors (mosfet_transistors) | required | 86% | primary_source | The canonical DRAM cell stores charge with transistor-controlled access; MOS transistor technology is required for the modern DRAM scope. |
|
| Semiconductor Devices (semiconductor_devices) | required | 84% | primary_source | DRAM is a semiconductor memory-chip technology rather than a magnetic-core or electromechanical memory system. |
|
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