EUV Lithography
Extreme-ultraviolet lithography using 13.5 nm light to print the smallest high-volume chip features.
Core metadata
- ID: euv_lithography
- Era: Modern
- First known date: 1960 (decade)
- Region: Global / multiple regions
- Review status: structurally_validated
- Maturity: established
Prerequisites
Dependents
- Gate-All-Around Nanosheet Transistors (gate_all_around_nanosheet_transistors)
- High-NA EUV Lithography (high_na_euv_lithography)
Fields
Field lanes
- Semiconductors & Integrated Circuits: Fabrication & Lithography
Node sources
- EUV Lithography Systems (ASML, 2026, generic_overview) • Supports: node, maturity
- Light and Lasers: Lithography Principles (ASML, 2026, generic_overview) • Supports: node, maturity
Prerequisite edge evidence
Edge/source evidence summary:
- Prerequisite edges: 3
- Average edge confidence: 73%
- Prerequisite sources: 3
- expert_inference: 3
| Prerequisite | Type | Confidence | Evidence level | Note | Sources |
|---|---|---|---|---|---|
| DUV Stepper Lithography (duv_stepper_lithography) | enabling | 68% | expert_inference | DUV Stepper Lithography provides a capability that enables this technology without being the only possible path. |
|
| Lasers (lasers) | required | 82% | expert_inference | Lasers is modeled as a necessary component or method for this technology in the current graph. |
|
| Plasma Physics (plasma_physics) | enabling | 68% | expert_inference | Plasma Physics provides a capability that enables this technology without being the only possible path. |
|
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