P-N Junction Diode

Semiconductor diode formed by joining p-type and n-type regions, enabling rectification and later optoelectronic devices.

Core metadata

ID: p_n_junction_diode
Era: Modern
First known date: 1940 (exact)
Region: Bell Telephone Laboratories, United States
Review status: source_checked
Maturity: established

Prerequisites

Dependents

None.

Fields

Semiconductors & Integrated Circuits

Field lanes

Semiconductors & Integrated Circuits: Materials & Devices

Node sources

The Silicon Engine (Computer History Museum, 2007, museum) • Supports: node, maturity
The Nobel Prize in Physics 2014: Popular Information (Nobel Prize, 2014, museum) • Supports: node, maturity
1940: Discovery of the p-n Junction (Computer History Museum, 2007, museum) • Supports: node, maturity

Prerequisite edge evidence

Edge/source evidence summary:

Prerequisite edges: 3
Average edge confidence: 73%
Prerequisite sources: 3
expert_inference: 3

Prerequisite	Type	Confidence	Evidence level	Note	Sources
Semiconductor Devices (semiconductor_devices)	required	82%	expert_inference	Semiconductors is modeled as a necessary component or method for this technology in the current graph.	The Silicon Engine (Computer History Museum, 2007, museum) • Supports: node, maturity, edge
Electronics (electronics)	enabling	68%	expert_inference	Electronics provides a capability that enables this technology without being the only possible path.	The Silicon Engine (Computer History Museum, 2007, museum) • Supports: node, maturity, edge
Quantum Physics (quantum_physics)	enabling	68%	expert_inference	Quantum Physics provides a capability that enables this technology without being the only possible path.	The Silicon Engine (Computer History Museum, 2007, museum) • Supports: node, maturity, edge

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