Ion Implantation
Semiconductor doping method that accelerates ions into wafers to precisely control transistor electrical properties.
Core metadata
- ID: ion_implantation
- Era: Modern
- First known date: 1954 (exact)
- Region: United States semiconductor research and patent system
- Review status: source_checked
- Maturity: established
Prerequisites
- Particle Accelerators (particle_accelerators)
- Semiconductor Devices (semiconductor_devices)
- Vacuum Technology (Early) (vacuum_technology_early)
Dependents
- None.
Fields
Field lanes
- Semiconductors & Integrated Circuits: Fabrication & Lithography
Node sources
- The Silicon Engine (Computer History Museum, 2007, museum) • Supports: node, maturity
- Forming Semiconductive Devices by Ionic Bombardment (Google Patents / U.S. Patent record, 1957, official_agency) • Supports: node, maturity
Prerequisite edge evidence
Edge/source evidence summary:
- Prerequisite edges: 3
- Average edge confidence: 75%
- Prerequisite sources: 3
- expert_inference: 3
| Prerequisite | Type | Confidence | Evidence level | Note | Sources |
|---|---|---|---|---|---|
| Semiconductor Devices (semiconductor_devices) | required | 82% | expert_inference | Semiconductors is modeled as a necessary component or method for this technology in the current graph. |
|
| Particle Accelerators (particle_accelerators) | enabling | 68% | expert_inference | Particle Accelerators provides a capability that enables this technology without being the only possible path. |
|
| Vacuum Technology (Early) (vacuum_technology_early) | historical_predecessor | 75% | expert_inference | Vacuum Technology (Early) is an earlier historical predecessor or foundation, not a one-to-one engineering dependency. |
|
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